MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications
MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications
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DOI：
10.1016/j.apmt.2016.09.018
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发表时间：
2016-12
影响因子：
8.3
通讯作者：
L. Nattermann;P. Ludewig;Nikolai Knaub;N. Rosemann;T. Hepp;E. Sterzer;S. Jin;K. Hild;S. Chatterjee;S. Sweeney;W. Stolz;K. Volz
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文献类型：
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作者：
L. Nattermann;P. Ludewig;Nikolai Knaub;N. Rosemann;T. Hepp;E. Sterzer;S. Jin;K. Hild;S. Chatterjee;S. Sweeney;W. Stolz;K. Volz
稀铋镓（PAsBi）为基础的结构是有前途的候选人，高效的光电应用，如1 eV的子电池在多结太阳能电池或红外激光二极管的有源区。带隙可以独立于晶格常数进行调节，这在理论上使得能够在GaAs衬底上在宽的带隙能量范围内沉积晶格匹配层。在这项工作中，首先，作为一个功能的Ga（PAs（Bi））合金可能的组成的带边位置的位移估计使用虚拟晶体近似和价带反交叉理论。其次，系统地研究了Ga（PAsBi）层的MOVPE生长。最后，我们展示了四元Ga（PAsBi）的第一个光致发光活性，并将实验结果与理论进行了比较。
Dilute bismide Ga(PAsBi)-based structures are promising candidates for highly efficient optoelectronic applications, like the 1 eV sub-cell in multi-junction solar cells or the active region in infra-red laser diodes. The band gap can be tuned independently from the lattice constant, which theoretically enables the deposition of lattice-matched layers in a wide range of band gap energies on GaAs substrate. In this work, firstly, the shifts in the band edge positions as a function of composition that are possible with the Ga(PAs(Bi)) alloy were estimated using the virtual crystal approximation and valence band anti-crossing theory. Secondly, systematic investigations on MOVPE growth of Ga(PAsBi) layers are presented. Finally, we show the first photoluminescence activity of quaternary Ga(PAsBi) and compare the experimental results to theory.