Fully depleted SOI (FDSOI) technology
Fully depleted SOI (FDSOI) technology
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DOI：
10.1007/s11432-016-5561-5
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发表时间：
2016-04
期刊：
影响因子：
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通讯作者：
K. Cheng;Ali Khaki-Firooz
中科院分区：
文献类型：
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作者：
K. Cheng;Ali Khaki-Firooz
全耗尽SOI（FDSOI）已成为一种可行的技术，不仅可以持续将CMOS尺寸缩小到22 nm节点及更高，而且可以在改造旧技术节点时提高传统技术的性能。在本文中，我们提供了FDSOI技术的概述，包括FDSOI设计，制造和生态系统的好处和挑战。我们认为FDSOI是中国半导体技术赶超的潜在基石。
Fully depleted SOI (FDSOI) has become a viable technology not only for continued CMOS scaling to 22 nm node and beyond but also for improving the performances of legacy technology when retrofitting to old technology nodes. In this paper, we provide an overview of FDSOI technology, including the benefits and challenges in FDSOI design, manufacturing, and ecosystem. We articulate that FDSOI is potential cornerstone for China to catch up and leapfrog in semiconductor technology.