Plasma-Based Copper Etch Process and Reliability
Plasma-Based Copper Etch Process and Reliability
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等离子铜蚀刻工艺和可靠性
DOI：
10.1149/08506.0165ecst
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Yuan, Tao
中科院分区：
文献类型：
--
作者：
Gao, Baizhen;Gao, Yong;Kuo, Yue;Yuan, Tao
铜被广泛用作超大规模集成电路的互连材料。研究了溅射沉积工艺对铜薄膜颗粒结构和电阻率的影响。还研究了等离子体基蚀刻工艺对铜线的影响。刻蚀后的线条边缘粗糙度随晶格结构变化。根据电迁移失败时间确定铜线相对于线宽的寿命。在恒压应力条件下，寿命随线宽的减小而减小。基于等离子体的工艺是制备铜微细线的有效方法。
Copper is widely used as the interconnect material in ultra-large-scaleintegrated circuits. The sputter deposition process effects on the copper thin film’s grain structure and resistivity have been studied. Process effects on copper lines prepared with the plasma-based etch process have also been investigated. The etched line edge roughness follows the grain structure. The lifetime of the copper line with respect to the line width was determined from the electromigration failure time. Under the constant voltage stress condition, the lifetime decreases with the decrease of the line width. The plasma-based process is effective in preparing copper fine lines.