Composition dependence of band offsets for (LaAlO3)1−x(Al2O3)x gate dielectrics determined by photoelectron spectroscopy and x-ray absorption spectroscopy
Composition dependence of band offsets for (LaAlO3)1−x(Al2O3)x gate dielectrics determined by photoelectron spectroscopy and x-ray absorption spectroscopy
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DOI：
10.1063/1.2356377
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发表时间：
2006-09
影响因子：
4
通讯作者：
R. Yasuhara;M. Komatsu;H. Takahashi;S. Toyoda;J. Okabayashi;H. Kumigashira;M. Oshima;D. Kukuruznyak;T. Chikyow
中科院分区：
文献类型：
--
作者：
R. Yasuhara;M. Komatsu;H. Takahashi;S. Toyoda;J. Okabayashi;H. Kumigashira;M. Oshima;D. Kukuruznyak;T. Chikyow
Electronic structures of (LaAlO3)1−x(Al2O3)x composite films (x=0, 0.2, 0.33, 0.5, and 1) for large scale integration (LSI) gate dielectrics deposited on p-type Si (100) substrates by a combinatorial pulsed laser deposition method have been analyzed using photoelectron spectroscopy and x-ray absorption spectroscopy. The systematic peak shifts due to chemical shifts were observed for core-level spectra. The conduction-band offset became smaller with increasing ratio of Al2O3, while the valence-band offset became larger. This precise determination of the band diagram revealed that LaAlO3 (x=0) had the optimum band offset for LSI gate dielectrics.
