N-rich silicon nitride angled MMI for coarse wavelength division (de)multiplexing in the O-band
N-rich silicon nitride angled MMI for coarse wavelength division (de)multiplexing in the O-band
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DOI：
10.1364/ol.43.001251
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发表时间：
2018-03-15
期刊：
影响因子：
3.6
通讯作者：
Gardes, Frederic Y.
中科院分区：
文献类型：
--
作者：
Bucio, Thalia Dominguez;Khokhar, Ali Z.;Gardes, Frederic Y.
我们报告的设计和制造的一个紧凑的角度多模干涉仪（AMMI）的600 nm厚的富氮氮化硅平台（n = 1.92）优化匹配国际电信联盟粗波分（解）复用标准在O电信波段。所展示的器件表现出良好的光谱响应，Δ λ = 20 nm，BW 3dB类似于11 nm，IL < 1.5 dB，XT类似于20 dB。此外，它还分别显示出对< 120 pm/nm的尺寸误差的高容限和对< 20 pm/℃的温度变化的低灵敏度。该器件的尺寸为0.02 mm x 1.7 mm，具有设计简单和后端兼容制造工艺的优点，由于其加工温度，可以实现多层集成方案
We report the design and fabrication of a compact angled multimode interferometer (AMMI) on a 600 nm thick N-rich silicon nitride platform (n = 1.92) optimized to match the International Telecommunication Union coarse wavelength division (de)multiplexing standard in the O telecommunication band. The demonstrated device exhibited a good spectral response with Delta lambda = 20 nm, BW3dB similar to 11 nm, IL < 1.5 dB, and XT similar to 20 dB. Additionally, it showed a high tolerance to dimensional errors < 120 pm/nm and low sensitivity to temperature variations < 20 pm/degrees C, respectively. This device had a footprint of 0.02 mm x 1.7 mmwith the advantage of a simple design and a back-end-of-line compatible fabrication process that enables multilayer integration schemes due to its processing temperature