Thermal Stability of Reliable Polycrystalline Zirconium Oxide for Nonvolatile Memory Application
Thermal Stability of Reliable Polycrystalline Zirconium Oxide for Nonvolatile Memory Application
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DOI：
10.1088/0256-307x/25/10/061
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发表时间：
2008-10
影响因子：
3.5
通讯作者：
Zhou Peng;Li Jing;Chen Liangyao;Tang Ting-ao;Lin Yin-yin
中科院分区：
文献类型：
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作者：
Zhou Peng;Li Jing;Chen Liangyao;Tang Ting-ao;Lin Yin-yin
研究了化学计量比氧化锆薄膜电阻开关的热稳定性，以应用于高成品率的非易失性存储器。在常规器件工艺中制造的Al/ZrO 2/Al电池在两个不同的稳定电阻状态之间显示出高度可靠的切换行为。还在各种条件和温度下测试了保持能力。Al/ZrO_2/Al电池的优异性能可以通过假设阳极/ZrO_2界面的存在和导电丝的形成/断裂机制来解释。器件故障以永久导电丝的形成来说明。
Thermal stability of resistive switching of stoichiometric zirconium oxide thin films is investigated for high yielding nonvolatile memory application. The Al/ZrO2/Al cell fabricated in the conventional device process shows highly reliable switching behaviour between two distinct stable resistance states. The retention capabilities are also tested under various conditions and temperatures. The excellent performance of Al/ZrO2/Al cell can be explained by assuming that anode/ ZrO2 interface exists and by conducting filament forming/rupture mechanism. The device failure is illustrated in terms of permanent conducting filaments formation.