Application of the transverse resonance method for efficient extraction of the dispersion relation of arbitrary layers in silicon interposers
Application of the transverse resonance method for efficient extraction of the dispersion relation of arbitrary layers in silicon interposers
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应用横向共振方法有效提取硅中介层中任意层的色散关系
DOI：
10.1109/sapiw.2013.6558345
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
C. Schuster
中科院分区：
文献类型：
--
作者：
David Dahl;X. Duan;A. Beyreuther;I. Ndip;K. Lang;C. Schuster
本文研究了金属层之间由任意数目的硅层和二氧化硅层组成的硅插入器中水平波传播的色散关系。计算结果由横向共振法(TRM)得到。通过与基于有限元的全波模拟结果的比较，验证了该方法的有效性。TRM的计算结果与全波模拟结果吻合较好，且计算时间明显缩短。还给出了硅插入器的典型布局的结果以及二氧化硅薄层和大量层的实例。在此基础上，给出了典型结构基本振型的近似解，并通过算例说明了近似解的适用性和局限性。
In this article, the dispersion relation for horizontal wave propagation in silicon interposers consisting of arbitrary numbers of silicon and silicon dioxide layers between metal layers is investigated. Results are obtained by the transverse resonance method (TRM). The method is verified by comparison to results of finite element based full-wave simulations. The results of the TRM show good correspondence with those obtained by full-wave simulations and can be obtained within significantly shorter calculation times. Results for a typical layout of a silicon interposer and examples for thin silicon dioxide layers and a large number of layers are also presented. Further, an approximate solution for the fundamental mode of typical structures is given and examples show the applicability and limitations of the approximate solution.