Electrochemical defect-mediated thin-film growth
Electrochemical defect-mediated thin-film growth
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DOI：
10.1126/science.284.5411.138
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发表时间：
1999-04
期刊：
影响因子：
56.9
通讯作者：
Sieradzki;Branković;Dimitrov
中科院分区：
文献类型：
--
作者：
Sieradzki;Branković;Dimitrov
本发明描述了一种电沉积技术，该电沉积技术产生原子级平坦的外延金属覆盖层，其质量类似于在升高的温度下通过双极真空技术获得的质量。在该方法中，感兴趣的金属如银与可逆沉积的介体金属共沉积。介体周期性地沉积并从表面剥离，这用于显著增加银原子的二维岛的密度，促进逐层薄膜生长模式。用原位扫描隧道显微镜观察了以铅或铜为介质的异质外延体系银/金（111）的生长过程。
An electrodeposition technique is described that produces atomically flat epitaxial metal overlayers of quality similar to that obtained by ultrahigh vacuum techniques at elevated temperature. In this approach, a metal of interest such as silver is co-deposited with a reversibly deposited mediator metal. The mediator is periodically deposited and stripped from the surface, and this serves to significantly increase the density of two-dimensional islands of silver atoms, promoting a layer-by-layer thin-film growth mode. In situ scanning tunneling microscopy was used to demonstrate the growth process for the heteroepitaxial system silver/gold (111) with either lead or copper as the mediator.