Electronic transport in silicon backbone polymers
Electronic transport in silicon backbone polymers
复制标题
硅主链聚合物中的电子传输
DOI：
10.1080/13642819008208650
复制
发表时间：
1990
期刊：
影响因子：
--
通讯作者：
M. Štolka
中科院分区：
文献类型：
--
作者：
M. Abkowitz;M. Rice;M. Štolka
摘要 最近对硅主链聚合物聚（甲基苯基硅撑）（PMPS）的飞行时间传输测量结果在广泛的领域和温度范围内进行，比以前更详细地描述了。一系列化学掺杂剂降低 PMPS 空穴漂移迁移率的相对效果与其各自的电离势相关。根据所描述的简单模型可以完全理解掺杂效应。 PMPS 中的传输表现出在含有芳香族和/或脂肪族侧基取代基（包括完全没有 π 电子的取代基）的一大类聚硅烯中观察到的关键特征。饱和碳主链聚合物（例如聚（N-乙烯基咔唑））中的侧基取代基完全主导咔唑发色团之间跳跃的传输过程。与这种行为相反，比较测量表明聚硅撑中的侧基取代基起着次要作用。该综合...
Abstract Results of recent time-of-flight transport measurements on the silicon backbone polymer poly(methylphenylsilylene) (PMPS) carried out over broad ranges of fields and temperatures described in much greater detail than heretofore. The relative effect of a series of chemical dopants in reducing the hole drift mobility of PMPS is correlated with their respective ionization potentials. Doping effects can be completely understood on the basis of a simple model which is described. Transport in PMPS manifests the key features observed in a broad class of polysilylenes containing aromatic and/or aliphatic side group substituents including those completely devoid of π electrons. Side-group substituents in saturated carbon backbone polymers such as poly(N-vinylcarbazole) completely dominate the transport process which is hopping between the carbazole chromophores. In contrast with this behaviour, comparative measurements indicate that side-group substituents in polysilylenes play a secondary role. The compl...