Plasma etching phenomena in heavily boron-doped diamond growth
Plasma etching phenomena in heavily boron-doped diamond growth
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DOI:
10.1016/j.diamond.2017.04.007
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发表时间:
2017-06
影响因子:
4.1
通讯作者:
Alexandre Fiori;T. Teraji
中科院分区:
文献类型:
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作者:
Alexandre Fiori;T. Teraji