Growth of (111) CdTe on GaAs/Si and Si substrates for HgCdTe epitaxy
Growth of (111) CdTe on GaAs/Si and Si substrates for HgCdTe epitaxy
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用于 HgCdTe 外延的 (111) CdTe 在 GaAs/Si 和 Si 衬底上的生长
DOI：
10.1116/1.585870
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发表时间：
1992
影响因子：
1.4
通讯作者：
P. Hallock
中科院分区：
文献类型：
--
作者：
R. Korenstein;P. Madison;P. Hallock
(111)用热壁外延法在GaAs/Si和Si衬底上生长了CdTe。X射线衍射、光致发光和缺陷蚀刻表明这些层具有高结晶质量。对于在GaAs/Si上生长的CdTe，已经获得了低至59弧秒的X射线摇摆曲线的半峰全宽，而对于在Si上生长的CdTe，已经获得了窄至315弧秒的X射线线宽。在（111）B CdTe/GaAs/Si衬底上用金属有机化学气相沉积法生长的HgCdTe薄膜非常光滑，没有其它取向的缺陷。
(111) CdTe has been grown on both GaAs/Si and Si by hot wall epitaxy. X‐ray diffraction, photoluminescence, and defect etching indicate that these layers are of high crystalline quality. For CdTe grown on GaAs/Si, full width at half‐maximum of x‐ray rocking curves as low as 59 arcsec have been obtained whereas for CdTe grown on Si, x‐ray linewidths as narrow as 315 arcsec have been obtained. HgCdTe grown on (111)B CdTe/GaAs/Si by metalorganic chemical vapor deposition is very smooth and devoid of the many defects that plague other orientations.