Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN (x = 0.32−1.0) single crystals
Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN (x = 0.32−1.0) single crystals
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DOI：
10.1063/1.4954691
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发表时间：
2016-06
影响因子：
3.2
通讯作者：
Limin Zhang;Weilin Jiang;A. Dissanayake;Jin-Xin Peng;W. Ai;Jiandong Zhang;Zihua Zhu;Tieshan Wang;V. Shutthanandan
中科院分区：
文献类型：
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作者：
Limin Zhang;Weilin Jiang;A. Dissanayake;Jin-Xin Peng;W. Ai;Jiandong Zhang;Zihua Zhu;Tieshan Wang;V. Shutthanandan
用离子沟道条件下的卢瑟福背散射光谱和飞行时间二次离子质谱仪研究了GaN/Al_2O_3衬底上In_xGa_(1-x)N(x=0.32，0.47，0.7，0.8和1.0)薄膜在5 MeV Xe离子室温辐照下的晶格无序和成分变化。结果表明，当注量为3×10~(13)cm时，−_(1-x)N的晶格无序相对能级随In浓度x从0.32增加到0.7，其相对无序能级从59%单调增加到90%，x进一步增加到1.0，晶格无序能级几乎没有增加。与富Ga的InxGa1-xN(x=0.32和0.47)相比，在富In的InxGa1-xN(x=0.7，0.8和1.0)中观察到显著的体积膨胀，高达∼25%并伴有氧化。此外，辐照诱导的原子混合发生在富In的InxGa1-xN和GaN的界面上。研究结果表明，高In含量的InxGa1-xN对重离子辐照具有极强的敏感性。
Lattice disorder and compositional changes in InxGa1-xN (x = 0.32, 0.47, 0.7, 0.8, and 1.0) films on GaN/Al2O3 substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3 × 1013 cm−2, the relative level of lattice disorder in InxGa1-xN increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrast to Ga-rich InxGa1-xN (x = 0.32 and 0.47), significant volume swelling of up to ∼25% accompanied with oxidation in In-rich InxGa1-xN (x = 0.7, 0.8, and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich InxGa1-xN and GaN. The results from this study indicate an extreme susceptibility of the high In-content InxGa1-xN to heavy-ion irradi...