Sn-doped In2O3 nanowires: enhancement of electrical field emission by a selective area growth.
Sn-doped In2O3 nanowires: enhancement of electrical field emission by a selective area growth.
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DOI：
10.1186/1556-276x-7-684
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发表时间：
2012-12-21
影响因子：
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通讯作者：
Lin SJ
中科院分区：
文献类型：
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作者：
Chang WC;Kuo CH;Juan CC;Lee PJ;Chueh YL;Lin SJ
采用气-液-固（VLS）法制备了单晶掺锡In2O3 （ITO）纳米线，在600℃条件下进行了选择性面积生长，减少了屏蔽效应，改善了其场发射性能。场发射性能的增强表明，在选择性面积生长3 h后，导通场从9.3 V μm−1减小到6.6 V μm−1，场增强因子（β）从1,621增加到1,857。此外，我们发现屏幕效应也高度依赖于纳米线的长度对场发射性能的影响。生长10 h后，导通场从6.6 V μm−1增加到13.6 V μm−1，β值从1857降低到699。详细研究了电势和NW密度方面的屏蔽效应。研究结果为提高纳米器件的场发射性能提供了一条有效途径。
Selective area growth of single crystalline Sn-doped In2O3 (ITO) nanowires synthesized via vapor–liquid–solid (VLS) method at 600°C was applied to improve the field emission behavior owing to the reduction of screen effect. The enhanced field emission performance reveals the reduction of turn-on fields from 9.3 to 6.6 V μm−1 with increase of field enhancement factors (β) from 1,621 to 1,857 after the selective area growth at 3 h. Moreover, we find that the screen effect also highly depends on the length of nanowires on the field emission performance. Consequently, the turn-on fields increase from 6.6 to 13.6 V μm−1 with decreasing β values from 1,857 to 699 after the 10-h growth. The detailed screen effect in terms of electrical potential and NW density are investigated in details. The findings provide an effective way of improving the field emission properties for nanodevice application.