An orthogonal surface phase in semipolar GaN∕r-plane sapphire
An orthogonal surface phase in semipolar GaN∕r-plane sapphire
复制标题
半极性 GaN∕r 面蓝宝石中的正交表面相
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
K. Ohkawa
中科院分区：
文献类型：
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作者：
K. Kusakabe;D. Terui;T. Yamazaki;I. Hashimoto;K. Ohkawa
本文报道了通过金属有机气相外延在 r 平面蓝宝石衬底上生长的半极性 GaN 薄膜的结构表征。半极性GaN的极性取向被指定为N极性面面向表面侧。半极性GaN∕r面蓝宝石的外延关系确定为[0001´]GaN∥[12´13]蓝宝石和[11´00]GaN∥[11´01´]蓝宝石。透射电镜观察到围绕c轴正交扭曲的反常相几乎集中在表面。
This paper reports structural characterization on semipolar GaN films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy. The polar orientation of semipolar GaN is assigned that the N-polar plane faces the surface side. The epitaxial relationship of the semipolar GaN∕r-plane sapphire is determined as [0001¯]GaN∥[12¯13]sapphire and [11¯00]GaN∥[11¯01¯]sapphire. An anomalous phase orthogonal-twisted around the c-axis is revealed by transmission electron microscope, which is almost localized at the surface.