Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotation
Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotation
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DOI：
10.1038/nmat2333
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发表时间：
2009-02-01
期刊：
影响因子：
41.2
通讯作者：
Morenzoni, E.
中科院分区：
文献类型：
--
作者：
Drew, A. J.;Hoppler, J.;Morenzoni, E.
使用自旋自由度的电子器件在未来技术中具有独特的前景。这些“自旋电子”器件的性能在很大程度上依赖于自旋极化在不同层和界面上的有效转移。这种复杂的转移过程取决于单个材料的性质，并且最重要的是，取决于不同材料之间的界面的结构和电子性质以及真实的器件所共有的缺陷。这些因素的知识是特别重要的有机自旋电子学的相对较新的领域，那里是一个严重缺乏合适的实验技术，可以产生深度分辨的信息内的真实的设备的埋层的电荷载流子的自旋极化。在这里，我们提出了一种新的深度分辨技术，用于测量的自旋极化的电流注入的电子在有机自旋阀，并发现所测量的自旋扩散长度的温度依赖性与设备的磁阻。
Electronic devices that use the spin degree of freedom hold unique prospects for future technology. The performance of these 'spintronic' devices relies heavily on the efficient transfer of spin polarization across different layers and interfaces. This complex transfer process depends on individual material properties and also, most importantly, on the structural and electronic properties of the interfaces between the different materials and defects that are common to real devices. Knowledge of these factors is especially important for the relatively newfield of organic spintronics, where there is a severe lack of suitable experimental techniques that can yield depth-resolved information about the spin polarization of charge carriers within buried layers of real devices. Here, we present a new depth-resolved technique for measuring the spin polarization of current-injected electrons in an organic spin valve and find the temperature dependence of the measured spin diffusion length is correlated with the device magnetoresistance.