Ni thin films vacuum-evaporated on polyethylene naphthalate substrates with and without the application of magnetic field
Ni thin films vacuum-evaporated on polyethylene naphthalate substrates with and without the application of magnetic field
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DOI：
10.1016/j.apsusc.2008.10.036
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发表时间：
2009-01-01
影响因子：
6.7
通讯作者：
Hirotsu, Yoshihiko
中科院分区：
文献类型：
--
作者：
Kaiju, Hideo;Ono, Akito;Hirotsu, Yoshihiko
研究了在加磁场和不加磁场的情况下，在聚萘二甲酸乙二醇酯(PEN)有机衬底上真空沉积Ni薄膜的表面粗糙度、表面丘尺寸和界面结构的结构特征，并讨论了其制作量子交叉(QC)器件的可行性。对于无磁场蒸发的Ni/PEN，随着厚度增加到41 nm，表面粗糙度从1.3 nm减小到0.69 nm，表面堆积尺寸从32 nm增加到80 nm。而在360Oe磁场下蒸发的Ni/PEN薄膜，随着厚度的增加，表面粗糙度由1.3 nm略降至1.1 nm，表面堆尺寸在28~30 nm之间基本保持不变。还可以证实，每个样品都没有Ni扩散到PEN层中，从而获得了清晰的Ni/PEN界面和光滑的Ni表面。因此，这些实验结果表明，Ni/PEN薄膜有望成为QC器件中的金属/绝缘体杂化材料，从而产生新型的高密度存储器件。(C)2008爱思唯尔B.V.保留所有权利。
We study the structural properties of the surface roughness, the surface mound size and the interfacial structure in Ni thin films vacuum-deposited on polyethylene naphthalate (PEN) organic substrates with and without the application of magnetic field and discuss its feasibility of fabricating quantum cross (QC) devices. For Ni/PEN evaporated without the magnetic field, the surface roughness decreases from 1.3 nm to 0.69 nm and the surface mound size increases from 32 nm to 80 nm with the thickness increased to 41 nm. In contrast, for Ni/PEN evaporated in the magnetic field of 360 Oe, the surface roughness tends to slightly decrease from 1.3 nm to 1.1 nm and the surface mound size shows the almost constant value of 28-30 nm with the thickness increased to 35 nm. It can be also confirmed for each sample that there is no diffusion of Ni into the PEN layer, resulting in clear Ni/PEN interface and smooth Ni surface. Therefore, these experimental results indicate that Ni/PEN films can be expected as metal/insulator hybridmaterials in QC devices, leading to novel high-density memory devices. (C) 2008 Elsevier B.V. All rights reserved.