2 Mb SPRAM (SPin-transfer torque RAM) with bit-by-bit bi-directional current write and parallelizing-direction current read
2 Mb SPRAM (SPin-transfer torque RAM) with bit-by-bit bi-directional current write and parallelizing-direction current read
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DOI：
10.1109/jssc.2007.909751
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发表时间：
2008-01-01
影响因子：
5.4
通讯作者：
Ohno, Hideo
中科院分区：
文献类型：
--
作者：
Kawahara, Takayuki;Takemura, Riichiro;Ohno, Hideo
一个1.8 V的2 Mb自旋转移力矩RAM（SPRAM）芯片使用0.2 μ m的逻辑工艺与MgO隧道势垒单元演示了潜在的低功耗非易失性RAM，或通用存储器的电路技术。该芯片采用了一种阵列方案，采用逐位双向电流写入，以实现100 ns的适当自旋转移扭矩写入，并采用低压位线并行方向电流阅读，以防止导致40 ns访问时间的读取干扰。
A 1.8 V 2 Mb SPin-transfer torque RAM (SPRAM) chip using a 0.2 mu m logic process with an MgO tunneling barrier cell demonstrates the circuit technologies for potential low-power nonvolatile RAM, or universal memory. This chip features an array scheme with bit-by-bit bi-directional current writing to achieve proper spin-transfer torque writing of 100 ns, and parallelizing-direction current reading with a low-voltage bit-line for preventing read disturbances that lead to 40 ns access time.