Electric-field enhanced thermionic emission model for carrier injection mechanism of organic field-effect transistors: understanding of contact resistance
Electric-field enhanced thermionic emission model for carrier injection mechanism of organic field-effect transistors: understanding of contact resistance
复制标题
有机场效应晶体管载流子注入机制的电场增强热电子发射模型：接触电阻的理解
DOI：
10.1088/1361-6463/aa4e95
复制
发表时间：
2017-01-25
影响因子：
3.4
通讯作者：
Weis, Martin
中科院分区：
文献类型：
--
作者：
Li, Jun;Ou-Yang, Wei;Weis, Martin
我们开发了一个电场增强的热离子发射模型，结合等效电路，用于三端有机晶体管结构来解释门电压相关的接触电阻。在该模型中，接触电阻由两部分组成：(i)界面电阻不仅受界面能垒的影响，而且强烈依赖于有源层的厚度；（ii）体电阻仅受有源层本身的影响。与以往的简单幂函数模型不同，该模型在拟合参数中具有物理意义，可以很好地拟合一系列独立数据的电压依赖性。此外，首次可以提取并合理估计体阻分量，证明即使对于具有高有效迁移率的器件，体阻分量也不容忽视。所建立的模型有助于理解有机薄膜晶体管的接触电阻和载流子注入行为。
We developed an electric-field enhanced thermionic emission model combined with an equivalent circuit for a three-terminal organic transistor structure to interpret the gate-voltage dependent contact resistance. In the model the contact resistance is composed of two components: (i) the interfacial resistance not only influenced by interfacial energy barrier but also strongly dependent on active layer thickness, and (ii) the bulk resistance that is affected only by active layer itself. The model having physical meaning in the fitting parameters, different from the previous with simple power functions, can well fit the voltage dependence for a series of independent data. In addition, the bulk resistance component can be extracted and is estimated reasonable for the first time, which is demonstrated not to be neglected even for the devices with high effective mobility. The developed model will be helpful for understanding of contact resistance and charge carrier injection behavior in the organic thin film transistors.