Effect of Vacancy Distribution on the Thermal Conductivity of Ga2Te3 and Ga2Se3
Effect of Vacancy Distribution on the Thermal Conductivity of Ga2Te3 and Ga2Se3
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DOI:
10.1007/s11664-010-1479-7
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发表时间:
2011-01
影响因子:
2.1
通讯作者:
Chang-Eun Kim;K. Kurosaki;M. Ishimaru;H. Muta;S. Yamanaka
中科院分区:
文献类型:
--
作者:
Chang-Eun Kim;K. Kurosaki;M. Ishimaru;H. Muta;S. Yamanaka
Our group has focused attention on Ga2Te3as a natural nanostructured thermoelectric material. Ga2Te3has basically a zincblende structure, but one-third of the Ga sites are structural vacancies due to the valence mismatch between Ga and Te. It has been confirmed that (1) vacancies in Ga2Te3exist as two-dimensional (2D) vacancy planes, and (2) Ga2Te3exhibits an unexpectedly low thermal conductivity (κ), most likely due to highly effective phonon scattering by the 2D vacancy planes. However, the effect of the size and periodicity of the 2D vacancy planes onκhas been unclear. In addition, it has also been unclear whether only the 2D vacancy planes reduceκor if point-type vacancies can also reduceκ. In the present study, we tried to prepare Ga2Te3and Ga2Se3with various vacancy distributions by controlling annealing conditions. The atomic structures of the samples were characterized by means of transmission electron microscopy, andκwas evaluated from the thermal diffusivity measured by the laser flash method. The effects of vacancy distributions onκof Ga2Te3and Ga2Se3are discussed.