Bright High-Purity Quantum Emitters in Aluminum Nitride Integrated Photonics
Bright High-Purity Quantum Emitters in Aluminum Nitride Integrated Photonics
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DOI：
10.1021/acsphotonics.0c01259
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发表时间：
2020-10-21
期刊：
影响因子：
7
通讯作者：
Englund, Dirk
中科院分区：
文献类型：
--
作者：
Lu, Tsung-Ju;Lienhard, Benjamin;Englund, Dirk
固体量子发射器（QEs）是基于光子的量子信息处理的基础。由于在光电子、高压功率晶体管和微波放大器等领域的大规模和不断增长的应用推动了iii -氮化物半导体的复杂制造，因此人们对开发高质量的QEs有着浓厚的兴趣。本文报道了在氮化铝基光子集成电路平台上产生和直接集成量子阱的方法。对于单个波导集成的QEs，在连续波（CW）激励下，在室温下测量的片外计数率超过每秒6 × 10(4)个计数（cps；饱和率>8.6 × 10(4) cps）。在无图像化薄膜样品中，在室温连续激发下测量了g((2))(0)近似于0.08的反聚束和超过8 × 10(5) cps的光子计数率（饱和率bbb1 × 10(6) cps）。尽管自旋和详细的光学线宽测量有待于未来的工作，但这些结果已经显示出高质量量子阱单片集成在广泛的iii -氮化物器件技术中的潜力，这将带来新的量子器件机会和工业可扩展性。
Solid-state quantum emitters (QEs) are fundamental in photonic-based quantum information processing. There is strong interest to develop high-quality QEs in III-nitride semiconductors because of their sophisticated manufacturing driven by large and growing applications in optoelectronics, high voltage power transistors, and microwave amplifiers. Here, the generation and direct integration of QEs in an aluminum nitride-based photonic integrated circuit platform is reported. For individual waveguide-integrated QEs, an off-chip count rate exceeding 6 x 10(4) counts per second (cps; saturation rate >8.6 x 10(4) cps) is measured at room temperature under continuous-wave ( CW) excitation. In an unpatterned thin-film sample, antibunching with g((2))(0) similar to 0.08 and photon count rates exceeding 8 x 10(5) cps (saturation rate >1 x 10(6) cps) are measured at room temperature under CW excitation. Although spin and detailed optical line width measurements are left for future work, these results already show the potential for high-quality QEs monolithically integrated in a wide range of III-nitride device technologies that would enable new quantum device opportunities and industrial scalability.