Controlling the nanostructure of bismuth telluride by selective chemical vapour deposition from a single source precursor
Controlling the nanostructure of bismuth telluride by selective chemical vapour deposition from a single source precursor
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DOI：
10.1039/c4ta00341a
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发表时间：
2014-03
影响因子：
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通讯作者：
Sophie L. Benjamin;C. K. de Groot;Chitra Gurnani;Andrew L. Hector;R. Huang;E. Koukharenko;W. Levason;G. Reid
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文献类型：
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作者：
Sophie L. Benjamin;C. K. de Groot;Chitra Gurnani;Andrew L. Hector;R. Huang;E. Koukharenko;W. Levason;G. Reid
高品质的，纳米结构的Bi2Te3，具有前所未有的程度的位置和取向控制的材料形式在纳米尺度上，很容易获得低压化学气相沉积使用一种新的分子前体。该系统提供了一种方便的方法，提供了提高Bi2Te3的热电效率和发展拓扑绝缘体的新生领域所需的关键结构要求。
High quality, nanostructured Bi2Te3, with an unprecedented degree of positional and orientational control of the material form on the nanoscale, is readily obtained by low pressure chemical vapour deposition using a new molecular precursor. This system offers a convenient method that delivers key structural requirements necessary to improve the thermoelectric efficiency of Bi2Te3 and to develop the nascent field of topological insulators.