Layout Decomposition Co-Optimization for Hybrid E-Beam and Multiple Patterning Lithography
Layout Decomposition Co-Optimization for Hybrid E-Beam and Multiple Patterning Lithography
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DOI:
10.1109/tcad.2015.2512903
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发表时间:
2016-09
影响因子:
2.9
通讯作者:
Yunfeng Yang;W. Luk;H. Zhou;Changhao Yan;Xuan Zeng;Dian Zhou
中科院分区:
文献类型:
--
作者:
Yunfeng Yang;W. Luk;H. Zhou;Changhao Yan;Xuan Zeng;Dian Zhou
As the feature size keeps scaling down and the circuit complexity increases rapidly, a more advanced hybrid lithography, which combines multiple patterning and electron-beam lithography (EBL), is promising to further enhance the pattern resolution. In this paper, we formulate the layout decomposition problem for this hybrid lithography as a minimum vertex deletion <inline-formula> <tex-math notation="LaTeX">${K}$ </tex-math></inline-formula>-partition problem, where <inline-formula> <tex-math notation="LaTeX">${K}$ </tex-math></inline-formula> is the number of masks in multiple patterning. Stitch minimization and EBL throughput are considered uniformly by adding a virtual vertex between two feature vertices for each stitch candidate during the conflict graph construction phase. For <inline-formula> <tex-math notation="LaTeX">${K} {=} 2$ </tex-math></inline-formula>, we propose a primal-dual (PD) method for solving the underlying minimum odd-cycle cover problem efficiently. In addition, a chain decomposition algorithm is employed for removing all “noncyclable” edges. Furthermore, we investigate two versions of the PD method, one with planarization and one without. For <inline-formula> <tex-math notation="LaTeX">${K} {>} 2$ </tex-math></inline-formula>, we propose a random-initialized local search method that iteratively applies the PD solver. Experimental results show that compared with a two-stage method, our proposed methods reduce the EBL usage by 65.5% with double patterning and 38.7% with triple patterning on average for the benchmarks.