Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution
Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution
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DOI：
10.1103/physrevb.77.035105
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发表时间：
2008-01-01
影响因子：
3.7
通讯作者：
Takagi, H.
中科院分区：
文献类型：
--
作者：
Inoue, I. H.;Yasuda, S.;Takagi, H.
金属/氧化物/金属三明治，这将是一个彻底创新的非易失性存储器件的基础上，异国情调的功能，从物理的角度来看。在这里，绝缘体是一种普遍存在的和经典的二元过渡金属氧化物（TMO），如Fe 2 O3，NiO和CoO。该夹层结构呈现出在两种状态之间可逆地切换的电阻：一种是高电阻关断状态，另一种是导电导通状态。在这些二元TMO三明治中普遍观察到几个明显的特征：即非极性开关、非易失性阈值开关和电流-电压二元性。从系统的样品大小依赖性的电阻在开和关状态下，我们得出结论，电阻切换是由于形成的“电龙头”的接口，这表现为一个均匀的电流分布的非均匀过渡。
Exotic features of a metal/oxide/metal sandwich, which will be the basis for a drastically innovative nonvolatile memory device, is brought to light from a physical point of view. Here the insulator is one of the ubiquitous and classic binary-transition-metal oxides (TMO), such as Fe2O3, NiO, and CoO. The sandwich exhibits a resistance that reversibly switches between two states: one is a highly resistive off state and the other is a conductive on state. Several distinct features were universally observed in these binary TMO sandwiches: namely, nonpolar switching, nonvolatile threshold switching, and current-voltage duality. From the systematic sample-size dependence of the resistance in on and off states, we conclude that the resistance switching is due to the formation of "electric faucet" at the interface, which shows up as a homogeneous to inhomogeneous transition of the current distribution.