Secondary defects induced by ion and electron irradiation of GaSb
Secondary defects induced by ion and electron irradiation of GaSb
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DOI：
10.1080/09500839.2011.552445
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发表时间：
2011-01
影响因子：
1.2
通讯作者：
N. Nitta;E. Taguchi;H. Yasuda;H. Mori;Y. Hayashi;T. Yoshiie;M. Taniwaki
中科院分区：
文献类型：
--
作者：
N. Nitta;E. Taguchi;H. Yasuda;H. Mori;Y. Hayashi;T. Yoshiie;M. Taniwaki
比较了液氮温度下离子和电子辐照高达 6 dpa（每个原子的位移）在 GaSb 薄膜中引起的二次缺陷。对于Sn离子（60keV）照射，观察到空隙。然而，对于高能电子（2 MeV）照射，会产生间隙型位错环。在 6 dpa 的相同损伤水平下进行辐照后，空洞和间隙型位错环的密度几乎相等（8 × 1014 空洞/m2 和 3 × 1014 环/m2）。结论是，离子辐照形成的空洞是在级联损伤中局部空位缺陷的产生之后形成的。
Secondary defects induced by ion and electron irradiation up to 6 dpa (displacements per atom) at liquid-nitrogen temperature in GaSb thin films are compared. For Sn ion (60 keV) irradiation, voids were observed. However, for high-energy electron (2 MeV) irradiation, interstitial-type dislocation loops were produced. The densities of voids and interstitial-type dislocation loops were almost equivalent (8 × 1014 voids/m2 and 3 × 1014 loops/m2) after irradiations at the same damage level of 6 dpa. It is concluded that the formation of voids by ion irradiation follows the creation of localised vacancy defects in cascade damage.