Broadband indium tin oxide nanowire arrays as saturable absorbers for solid-state lasers
Broadband indium tin oxide nanowire arrays as saturable absorbers for solid-state lasers
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DOI：
10.1364/oe.380903
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发表时间：
2020-01-20
期刊：
影响因子：
3.8
通讯作者：
Liu, Jie
中科院分区：
文献类型：
--
作者：
Feng, Xiaoyue;Liu, Jingjing;Liu, Jie
Indium Tin Oxide nanowire arrays (ITO-NWAs), as epsilon-near-zero (ENZ) materials, exhibit a fast response time and a low saturable absorption intensity, which make them promising photoelectric materials. In this study, ITO-NWAs were successfully fabricated using a chemical vapor deposition (CVD) method, and the saturable absorption properties of this material were characterized in the near-infrared region. Further, passively Q-switched all-solid-state lasers were realized at wavelengths of 1.0, 1.3, and 2.0 mu m using the as-prepared saturable absorber (SA). To the best of our knowledge, we present the first application of ITO-NWAs in all-solid-state lasers. The results reveal that ITO-NWAs may be applied as an SA while developing Q-switched lasers and that they exhibit a broad application prospect as broadband saturable absorption materials. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
