Electric field-modulated amplified spontaneous emission in organo-lead halide perovskite CH3NH3PbI3
Electric field-modulated amplified spontaneous emission in organo-lead halide perovskite CH3NH3PbI3
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DOI：
10.1063/1.4938754
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发表时间：
2015-12
影响因子：
4
通讯作者：
Fang Yuan;Zhaoxin Wu;Hua Dong;B. Xia;Jun Xi;Shuya Ning;Lin Ma;X. Hou
中科院分区：
文献类型：
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作者：
Fang Yuan;Zhaoxin Wu;Hua Dong;B. Xia;Jun Xi;Shuya Ning;Lin Ma;X. Hou
研究了有机卤化铅钙钛矿CH3NH3PbI3(别名MAPbI3)层的自发辐射(SE)和放大自发辐射(ASE)的电场调制。随着外加电场的增加，Se和ASE强度发生了电场诱导猝灭，ASE发射峰蓝移，这可以归因于MAPbI3层中光生激子的场致电离。基于对激子猝灭因子和介电常数的分析，我们估算出室温下激子结合能∼为36 meV，这将为进一步研究MAPbI_3的光电特性提供有益的认识，并为未来的光电子学应用奠定基础。
The electric field-modulation of the spontaneous emission (SE) and amplified spontaneous emission (ASE) in organo-lead halide perovskite CH3NH3PbI3 (aliased as MAPbI3) layer has been investigated. With the increase of the external applied electric field, the electric field-induced quenching of the SE and ASE intensity was observed, accompanying with a blue-shift of the ASE emission peaks, which can be attributed to field-induced ionization of photogenerated excitons in the MAPbI3 layer. Based on the analysis of quenching factor and the dielectric constant, we estimated an exciton binding energy ∼36 meV at room temperature, which will provide useful insights into the optical-electrical characteristics of MAPbI3 and pave the way for the future optoelectronic applications.