Coupling of photonic crystal cavity and interlayer exciton in heterobilayer of transition metal dichalcogenides
Coupling of photonic crystal cavity and interlayer exciton in heterobilayer of transition metal dichalcogenides
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过渡金属二硫化物异质双层中光子晶体腔与层间激子的耦合
DOI:
10.1088/2053-1583/ab597d
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发表时间:
2020
期刊:
影响因子:
5.5
通讯作者:
Majumdar, Arka
中科院分区:
文献类型:
--
作者:
Rivera, Pasqual;Fryett, Taylor K;Chen, Yueyang;Liu, Chang-Hua;Ray, Essance;Hatami, Fariba;Yan, Jiaqiang;Mandrus, David;Yao, Wang;Majumdar, Arka
The advent of van der Waals heterostructures marks the emergence of a new class of synthetic materials with novel properties that are unattainable in their constituent materials. The 2D architecture of these layered materials makes them naturally suited for integration with a wide variety of planar nanophotonic cavities for next-generation low-power optoelectronic devices and explorations of fundamental physical effects in these new systems. Here, we report the coupling of the interlayer exciton in a transition metal dichalcogenide heterobilayer with a gallium phosphide photonic crystal defect cavity. The exciton-cavity coupling is found to be in the weak regime, resulting in~ 15-fold increase in the photoluminescence intensity for interlayer exciton in resonance with the cavity. Simulation results suggest that the increased intensity stems from a Purcell enhancement of~ 60. The order of magnitude enhancement of the photoluminescence yield offsets the low oscillator strength of the interlayer exciton, adding a new tool for probing the underlying physics of this excitonic system.
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影响因子:
35
作者:
Dufferwiel, S.;Lyons, T. P.;Tartakovskii, A. I.
通讯作者:
Tartakovskii, A. I.
影响因子:
10.8
作者:
Miller, Bastian;Steinhoff, Alexander;Wurstbauer, Ursula
通讯作者:
Wurstbauer, Ursula
影响因子:
5.5
作者:
Nagler, Philipp;Plechinger, Gerd;Korn, Tobias
通讯作者:
Korn, Tobias
影响因子:
56.9
作者:
Jauregui, Luis A.;Joe, Andrew Y.;Kim, Philip
通讯作者:
Kim, Philip