Process research of high caspect ratio microstructure using SU-8 resist
Process research of high caspect ratio microstructure using SU-8 resist
复制标题
DOI：
10.1007/s00542-002-0242-2
复制
发表时间：
2004-05-01
影响因子：
2.1
通讯作者：
Chen, D
中科院分区：
文献类型：
--
作者：
Liu, J;Cai, B;Chen, D
SU-8是一种负)环氧型，近紫外光刻胶。这种抗蚀剂是专门为使用标准光刻设备的超厚高纵横比mems型应用而开发的。然而，在实践中，SU-8对工艺参数的变化非常敏感。为了提高光刻质量，并分析各参数之间的相互作用，采用正交阵列进行了实验。分析表明，暴露剂量和暴露后烘烤的相互作用对SU-8抗蚀剂与基体的粘附作用起重要作用。给出了建议的工艺条件。输出结构侧壁轮廓直，线条细，空间分辨率好。宽高比大于20。此外，还使用了几种金属薄膜作为衬底。经氧化处理的Ti膜对抗蚀剂的附着力最强。该结果将有助于为MEMS应用的低成本liga型工艺开辟可能性。
SU-8 is a negative) epoxy type, near-UV photoresist. This resist has been specifically developed for ultrathick) high-aspect-ratio MEMS-type applications using standard lithography equipment. However, in practice, SU-8 has shown to be very sensitive to process parameter variation. The orthogonal array was used in our experiments in order to improve the lithography quality and analyze the interaction among the parameters. The analyses show that the interaction between the exposure dose and post exposure bake has played an important role in adhesion between SU-8 resist and the substrate. The proposed process conditions are given. The output structure has straight sidewall profile, fine line and good space resolution. The aspect ratio is larger than 20. Moreover, several metallic films are used as substrates. The Ti film with oxidation treatment was found to have the strongest adhesion to the resist. The result will help to open possibilities for low-cost LIGA-type process for MEMS applications.