Direct observation of vast off-stoichiometric defects in single crystalline SnSe
Direct observation of vast off-stoichiometric defects in single crystalline SnSe
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直接观察单晶 SnSe 中大量的非化学计量缺陷
DOI:
10.1016/j.nanoen.2017.04.004
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发表时间:
2017-05
期刊:
影响因子:
17.6
通讯作者:
He Jiaqing
中科院分区:
文献类型:
--
作者:
Wu Di;Wu Lijun;He Dongsheng;Zhao Li-Dong;Li Wei;Wu Minghui;Jin Min;Xu Jingtao;Jiang Jun;Huang Li;Zhu Yimei;Kanatzidis Mercouri G.;He Jiaqing
Single crystalline tin selenide (SnSe) recently emerged as a very promising thermoelectric material for waste heat harvesting and thermoelectric cooling, due to its record high figure of meritZTin mediate temperature range. The most striking feature of SnSe lies in its extremely low lattice thermal conductivity as ascribed to the anisotropic and highly distorted Sn-Se bonds as well as the giant bond anharmonicity by previous studies, yet no theoretical models so far can give a quantitative explanation to such low a lattice thermal conductivity. In this work, we presented direct observation of an astonishingly vast number of off-stoichiometric Sn vacancies and Se interstitials, using sophisticated aberration corrected scanning transmission electron microscope; and credited the previously reported ultralow thermal conductivity of the SnSe single crystalline samples partly to their off-stoichiometric feature. To further validate the conclusion, we also synthesized stoichiometric SnSe single crystalline samples, and illustrated that the lattice thermal conductivity is deed much higher as compared with the off-stoichiometric single crystals. The scattering efficiency of individual point defect on heat-carrying phonons was then discussed in the state-of-art Debye-Callaway model.
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影响因子:
29.4
作者:
G. van Tendeloo;S. Bals;S. Van Aert;J. Verbeeck;D. Van dyck
通讯作者:
G. van Tendeloo;S. Bals;S. Van Aert;J. Verbeeck;D. Van dyck
影响因子:
8.6
作者:
Y. Takasu;T. Hasegawa;N. Ogita;M. Udagawa;M. Avila;K. Suekuni;T. Takabatake
通讯作者:
Y. Takasu;T. Hasegawa;N. Ogita;M. Udagawa;M. Avila;K. Suekuni;T. Takabatake
影响因子:
3.7
作者:
Kresse, G;Furthmuller, J
通讯作者:
Furthmuller, J
影响因子:
2.8
作者:
Klemens, PG
通讯作者:
Klemens, PG
影响因子:
19.6
作者:
Li, C. W.;Hong, J.;Delaire, O.
通讯作者:
Delaire, O.