Resistive Switching Memory Performance of Two-Dimensional Polyimide Covalent Organic Framework Films
Resistive Switching Memory Performance of Two-Dimensional Polyimide Covalent Organic Framework Films
复制标题
二维聚酰亚胺共价有机骨架薄膜的阻变存储性能
DOI：
10.1021/acsami.0c15789
复制
发表时间：
2020
影响因子：
9.5
通讯作者：
Yi Liu
中科院分区：
文献类型：
--
作者：
Bing Sun;Xinle Li;Tiantian Feng;Songliang Cai;Teresa Chen;Chenhui Zhu;Jian Zhang;Dong Wang;Yi Liu
在镀铟锡氧化物玻璃衬底上制备了二维聚酰亚胺共价有机骨架(2DPI-NT COF)薄膜，制备了两端夹心电阻存储器件。由4，4‘，4“-三氨基三苯胺和1，4，5，8-萘-1，4，5，8-四酸二酸酐在溶剂热条件下缩合而成的二维PI-NT COF薄膜结晶度高、择优取向好、厚度可调、表面粗糙度低。排列良好的电子给体(三苯胺单元)和受主单元(萘二亚胺单元)使二维PI-NT COF薄膜成为一种有希望的电子应用候选者。基于2DPI-NTCoF薄膜的存储器件在正扫描时的工作电压为+2.30V，在负扫描时的工作电压为−2.64V时，表现出典型的一写多读的阻性开关行为。高的通断电流比(正扫描为104-106，负扫描为104-106)和长时间保持时间表明阻性存储器件的高保真度、低误差和高稳定性。这种记忆行为归因于有序施主-受主体系中电场诱导的分子内电荷转移，为注入载流子提供了有效的电荷转移通道。这项工作是探索二维PI-COF薄膜阻性记忆特性的第一个例子，为二维COF作为信息存储介质的潜在应用提供了线索。
Two-dimensional polyimide covalent organic framework (2D PI-NT COF) films were constructed on indium tin oxide-coated glass substrates to fabricate two-terminal sandwiched resistive memory devices. The 2D PI-NT COF films condensated from the reaction between 4,4′,4″-triaminotriphenylamine and naphthalene-1,4,5,8-tetracarboxylic dianhydride under solvothermal conditions demonstrated high crystallinity, good orientation preference, tunable thickness, and low surface roughness. The well-aligned electron-donor (triphenylamine unit) and -acceptor (naphthalene diimide unit) arrays rendered the 2D PI-NT COF films a promising candidate for electronic applications. The memory devices based on 2D PI-NT COF films exhibited a typical write-once-read-many-time resistive switching behavior under an operating voltage of +2.30 V on the positive scan and −2.64 V on the negative scan. A high ON/OFF current ratio (>106for the positive scan and 104–106for the negative scan) and long-term retention time indicated the high fidelity, low error, and high stability of the resistive memory devices. The memory behavior was attributed to an electric field-induced intramolecular charge transfer in an ordered donor–acceptor system, which provided the effective charge-transfer channels for injected charge carriers. This work represents the first example that explores the resistive memory properties of 2D PI-COF films, shedding light on the potential application of 2D COFs as information storage media.