On the crystallization of thin films composed of Sb3.6Te with Ge for rewritable data storage
On the crystallization of thin films composed of Sb3.6Te with Ge for rewritable data storage
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DOI：
10.1063/1.1690112
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发表时间：
2004-05-01
影响因子：
3.2
通讯作者：
De Hosson, JTM
中科院分区：
文献类型：
--
作者：
Kooi, BJ;De Hosson, JTM
本文研究了非晶态Sb3.6Te薄膜(40 nm厚)和5at.用透射电子显微镜原位退火法研究了含Ge的Sb3.6Te薄膜(厚度分别为10、20和40 nm)。这些材料表现出生长控制的结晶，而不是通常的Ge2Sb2Te5表现成核控制的结晶。特别是测量了这些体系中晶体生长速度随温度的变化，由此可以得出晶体生长的活化能。5At的强大作用。添加%Ge对总晶化行为的影响表现为四种现象：Ge提高晶化温度(从95℃提高到150℃)，生长激活能增加(从1.58 eV增加到2.37 eV)，形核速率增加，生长各向异性降低。这些微晶具有一种特殊的转角结构，并对这种特殊结构的形成机制进行了描述。(C)2004年美国物理研究所。
This article addresses the crystallization of amorphous Sb3.6Te films (40 nm thick) and 5 at. % Ge containing Sb3.6Te films (10, 20, and 40 nm thick) as studied with transmission electron microcopy using in situ annealing. These materials exhibit growth-dominated crystallization, in contrast to the usual Ge2Sb2Te5 that shows nucleation-dominated crystallization. Particularly the crystal-growth velocity in these systems has been measured as a function of temperature from which the activation energy for growth can be derived. The strong effect of the 5 at. % Ge addition on the total crystallization behavior is revealed by the following four phenomena: Ge increases the crystallization temperature (from 95 to 150 degreesC), increases the activation energy for growth (from 1.58 to 2.37 eV), increases the nucleation rate and decreases the growth anisotropy. The crystallites have a special transrotational structure and a mechanism responsible for the development of this special structure is delineated. (C) 2004 American Institute of Physics.