Multilayer 3-D photonics in silicon
Multilayer 3-D photonics in silicon
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DOI：
10.1364/oe.15.012686
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发表时间：
2007-10-01
期刊：
影响因子：
3.8
通讯作者：
Jalali, Bahram
中科院分区：
文献类型：
--
作者：
Koonath, Prakash;Jalali, Bahram
报道了多层硅中的三维集成光子结构。将氧离子注入到具有图案化热氧化物掩模的绝缘体上硅衬底中，随后进行高温退火，在硅的3-D集成层上创建光子结构。该工艺与外延生长相结合，以在三个垂直集成的硅层上实现器件。作为演示车辆，我们报告了一种多级光学滤波器，该滤波器由两个次表面硅层上的耦合微盘组成，表面（第三）层上有总线波导。光学滤波器示出了超过14 dB的消光比，具有小于1 dB的过量插入损耗。(C)2007年，美国光学学会。
Three-dimensionally (3-D) integrated photonic structures in multiple layers of silicon are reported. Implantation of oxygen ions into a silicon-on-insulator substrate with a patterned thermal oxide mask, followed by a high temperature anneal, creates photonic structures on 3-D integrated layers of silicon. This process is combined with epitaxial growth to achieve devices on three vertically integrated layers of silicon. As a demonstration vehicle, we report a multistage optical filter that comprises of coupled microdisks on two subsurface silicon layers with bus waveguides on the surface (3rd) layer. The optical filter shows extinction ratios in excess of 14 dB, with excess insertion loss of less than 1 dB. (C) 2007 Optical Society of America.