Enhancing light extraction mechanisms of GaN-based light-emitting diodes through the integration of imprinting microstructures, patterned sapphire substrates, and surface roughness.
Enhancing light extraction mechanisms of GaN-based light-emitting diodes through the integration of imprinting microstructures, patterned sapphire substrates, and surface roughness.
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DOI：
10.1364/oe.18.00a489
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发表时间：
2010-11
期刊：
影响因子：
3.8
通讯作者：
Yeeu-Chang Lee;Ching-Huai Ni;Chih-Yeeu Chen
中科院分区：
文献类型：
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作者：
Yeeu-Chang Lee;Ching-Huai Ni;Chih-Yeeu Chen
分析了GaN基发光二极管（LED）光提取效率提高的各种机制。实验利用压印技术制作金字塔和倒金字塔微结构。然后将粗糙度处理与图案化蓝宝石衬底（PSS）LED上的这些压印结构集成。当与平面LED相比时，使用金字塔轮廓获得光输出功率的大约33%的改善。这比倒金字塔型高出近15%。粗糙度效应提供了约5%的效率提高。通过整合压印金字塔结构、PSS和表面粗糙度，总的光增强效率增加到85.9%。
Analysis of the various light extraction efficiency enhancement mechanisms for the GaN-based light emitting diodes (LEDs) was investigated. Experiments utilized the imprinting technique to fabricate pyramid and inverted pyramid microstructures. Roughness treatment was then integrated with these imprinting structures on patterned sapphire substrate (PSS) LEDs. An approximate 33% improvement in light output power was obtained using the pyramid profile when compared with the planar LED. This was nearly 15% higher than that of the inverted pyramid profile. The roughness effect provided an approximate 5% efficiency enhancement. The total light enhanced efficiency increased to 85.9% by integrating the imprinting pyramid structure, PSS, and surface roughness.