Characterization of self-heating in cryogenic high electron mobility transistors using Schottky thermometry
Characterization of self-heating in cryogenic high electron mobility transistors using Schottky thermometry
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DOI：
10.1063/5.0063331
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发表时间：
2021-05
影响因子：
3.2
通讯作者：
Alexander Y. Choi;Iretomiwa Esho;Bekari Gabritchidze;J. Kooi;A. Minnich
中科院分区：
文献类型：
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作者：
Alexander Y. Choi;Iretomiwa Esho;Bekari Gabritchidze;J. Kooi;A. Minnich
基于高电子迁移率晶体管（HEMT）的低温低噪声放大器广泛应用于射电天文学、深空通信和量子计算等领域，因此，控制微波噪声系数的物理机制具有实际意义。特别是，在低温下的门的热噪声的贡献仍然不清楚，由于缺乏在这些条件下的热阻的实验测量。在这里，我们报告的栅极结温度和热阻的HEMT在低温和室温下使用肖特基测温方法测量。在20 K的温度下，我们观察到的热阻与功率的非线性趋势是一致的声子辐射散热。基于这一发现，我们认为在低噪声偏置和液氦温度下的声子辐射的热输运，并估计从门的热噪声是几倍大于先前假设由于自加热。我们的结论是，没有改进的热管理，自加热的结果在一个实际的下限微波噪声系数的HEMT在低温温度。通讯作者：aminnich@caltech.edu 1 ar X iv：2 10 5. 11 57 1v 1 [connd-m at .m es -h al l] 2 4 M ay 2 02 1
Cryogenic low noise amplifiers based on high electron mobility transistors (HEMTs) are widely used in applications such as radio astronomy, deep space communications, and quantum computing, and the physical mechanisms governing the microwave noise figure are therefore of practical interest. In particular, the contribution of thermal noise from the gate at cryogenic temperatures remains unclear owing to a lack of experimental measurements of thermal resistance under these conditions. Here, we report measurements of gate junction temperature and thermal resistance in a HEMT at cryogenic and room temperatures using a Schottky thermometry method. At temperatures ∼ 20 K, we observe a nonlinear trend of thermal resistance versus power that is consistent with heat dissipation by phonon radiation. Based on this finding, we consider heat transport by phonon radiation at the low-noise bias and liquid helium temperatures and estimate that the thermal noise from the gate is several times larger than previously assumed owing to self-heating. We conclude that without improvements in thermal management, self-heating results in a practical lower limit for microwave noise figure of HEMTs at cryogenic temperatures. ∗ Corresponding author: aminnich@caltech.edu 1 ar X iv :2 10 5. 11 57 1v 1 [ co nd -m at .m es -h al l] 2 4 M ay 2 02 1