Anomalous hysteresis in organic field-effect transistors with SAM-modified electrodes: Structural switching of SAMs by electric field
Anomalous hysteresis in organic field-effect transistors with SAM-modified electrodes: Structural switching of SAMs by electric field
复制标题
具有 SAM 修饰电极的有机场效应晶体管的反常磁滞：电场对 SAM 的结构切换
DOI：
10.1016/j.orgel.2010.02.017
复制
发表时间：
2010
影响因子：
3.2
通讯作者：
Y. Kubozono
中科院分区：
文献类型：
--
作者：
R. Nouchi;R. Nouchi;Y. Kubozono
自组装单分子层（SAM）是金属功函数的有效调节剂，并且已被广泛用于修饰有机场效应晶体管（OFFET）的源/漏电极以实现从电极到有机半导体层的有效电荷注入。用1-烷基乙氧基硅烷自组装膜修饰Au电极的OFFERS的器件特性进行了研究，并显示出与通常观察到的相反的异常滞后。具有不同SAM分子种类或不同平均表面密度的OFFEs的测量表明，隧道势垒变窄伴随着结构有序-无序切换的SAM的漏电流的增加导致这种滞后行为。此外，OFET漏极电流的时间演化测量表明，垂直于SAM改性电极表面的电场，即，漏极电压引起开关。在这项研究中揭示的异常滞后是指示电刺激开关的自组装膜，这对未来的分子开关的发展有许多影响。
Self-assembled monolayers (SAMs) are efficient tuners of metal work functions, and have been widely used to modify source/drain electrodes of organic field-effect transistors (OFETs) to achieve effective charge injection from the electrodes into organic semiconducting layers. The device characteristics of OFETs with Au electrodes modified with 1-alkanethiol SAMs were investigated and displayed an anomalous hysteresis opposite to that generally observed. Measurements of OFETs with different SAM molecular species or different average surface densities indicate that an increase in drain currents by tunneling-barrier narrowing accompanied by a structural order–disorder switching of the SAMs causes such hysteretic behavior. Furthermore, time evolution measurements of OFET drain currents indicate that an electric field perpendicular to the surface of the SAM-modified electrodes, i.e., a drain voltage, induces the switching. The anomalous hysteresis unveiled in this study is indicative of an electrically-stimulated switching of SAMs, which has many implications with respect to the development of future molecular switches.