Ferroelectric BaTi2O5 thin film prepared by laser ablation
Ferroelectric BaTi2O5 thin film prepared by laser ablation
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DOI：
10.1116/1.2539219
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发表时间：
2007-02
期刊：
影响因子：
--
通讯作者：
Chuanbin Wang;R. Tu;T. Goto
中科院分区：
文献类型：
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作者：
Chuanbin Wang;R. Tu;T. Goto
采用激光烧蚀方法在氧化镁(100)衬底上成功制备了b轴取向的BaTi2O5铁电薄膜。研究了衬底温度(TSUB)和氧分压(PO2)对薄膜的晶体结构、表面形貌和介电性能的影响。在TSUB=923-973K，PO2=17.5Pa.真空条件下，在MgO(100)衬底上获得了BaTi2O5薄膜。薄膜的取向随TSUB和PO2的不同而从(710)变到(020)。制备致密细长织构的最佳工艺条件为：TSUB=973K，PO2=12.5Pa.B轴取向的BaTi2O5铁电薄膜的介电常数在750K有一个锐利的峰值(∼2000)。
Ferroelectric b-axis oriented BaTi2O5 thin film was successfully prepared on MgO (100) substrates by laser ablation. The effects of substrate temperature (Tsub) and oxygen partial pressure (PO2) on the crystal structure, surface morphology, and dielectric property of the film were investigated. BaTi2O5 thin films were obtained at Tsub=923–973K and PO2=vacuumto17.5Pa on MgO (100) substrates. The orientation of the films changed from (710) to (020) depending on Tsub and PO2. The optimum conditions for preparing film with a dense and elongated texture were Tsub=973K and PO2=12.5Pa. The permittivity of the ferroelectric b-axis oriented BaTi2O5 thin film showed a sharp peak (∼2000) at 750K.