New insight into MOS gate stack formations on Ge and SiGe from thermodynamics, reaction kinetics and nanoscale engineering
New insight into MOS gate stack formations on Ge and SiGe from thermodynamics, reaction kinetics and nanoscale engineering
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从热力学、反应动力学和纳米工程对 Ge 和 SiGe 上 MOS 栅堆叠形成的新见解
DOI：
10.1109/iedm19573.2019.8993522
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
T. Nishimura
中科院分区：
文献类型：
--
作者：
A. Toriumi;T. Nishimura
深入研究了Ge和SiGe栅极堆叠的氧化和热稳定性。这项工作的新认识的要点有两个。其一是GeO2/Ge界面反应不均匀，形成团聚的Ge区。另一种是SiGe中的Si被GeO2氧化，Ge在SiGe表面也发生团聚。对控制良好的Ge和SiGe栅叠层的形成提出了科学建议。
Oxidation and thermal robustness of gate stacks in Ge and SiGe are intensively investigated. The key points of new understanding in this work are twofold. One is that GeO2/Ge interface reaction occurs inhomogeneously, resulting in agglomerated Ge region formation. The other is that Si in SiGe is oxidized by GeO2 and Ge agglomeration also occurs on SiGe surface. Scientific tips are proposed for wellcontrolled Ge and SiGe gate stack formation.