Advanced indium-tin oxide ceramics for sputtering targets
Advanced indium-tin oxide ceramics for sputtering targets
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DOI：
10.1016/j.ceramint.2007.02.015
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发表时间：
2008-07-01
影响因子：
5.2
通讯作者：
Olsson, M. K.
中科院分区：
文献类型：
--
作者：
Medvedovski, E.;Alvarez, N.;Olsson, M. K.
氧化铟锡（ITO）陶瓷溅射靶广泛用于形成平板显示器、太阳能电池、抗静电膜等中的电极的导电透明薄膜，并且通常通过常规的直流磁控溅射工艺生产。陶瓷靶应该具有高纯度，具有均匀的微晶结构，并且应该具有高密度和高导电性。在目前的工作中，陶瓷组合物（例如In 2 O3和SnO 2的比例）和制造的挑战被认为是;它们包括使用高品质的起始材料，特别是In 2 O3粉末的纯度，形态和烧结性，制造路线和烧结工艺。报道了使用自制In 2 O3粉末开发和制造ITO陶瓷平面溅射靶的积极经验。制造了具有1500-1700 cm（2）尖端面积和TD的99+%密度的ITO陶瓷砖。研究了ITO陶瓷和溅射膜的物理性能。(c)2007 Elsevier Lid and Techna Group S.r.l. All rights reserved.
Indium-tin oxide (ITO) ceramic sputtering targets are widely used in formation of electrically conductive transparent thin films for electrodes in flat panel displays, solar cells, antistatic films and others, and which are commonly produced by a conventional dc magnetron sputtering process. The ceramic targets should be of high purity with a uniform microcrystalline structure and should possess high density and high electrical conductivity. In the present work, the challenges of the ceramic composition (e.g. the ratio of In2O3 and SnO2) and manufacturing are considered; they include the use of high quality starting materials, particularly In2O3 powders with respect to purity, morphology and sinterability, manufacturing routes and sintering process. Positive experience in the development and manufacturing of ITO ceramic planar sputtering targets using in-house prepared In2O3 powders is reported. ITO ceramic tiles with areas tip to 1500-1700 cm(2) and densities of 99+% of TD are manufactured. Physical proper-ties of the ITO ceramics and sputtered films have been studied. (c) 2007 Elsevier Lid and Techna Group S.r.l. All rights reserved.