Investigation of amorphous germanium contact properties with planar detectors made from USD-grown germanium crystals
Investigation of amorphous germanium contact properties with planar detectors made from USD-grown germanium crystals
复制标题
DOI：
10.1088/1748-0221/13/12/p12026
复制
发表时间：
2018-09
影响因子：
1.3
通讯作者：
Wenzhao Wei;Xianghua Meng;Yangyang Li;Jing Liu;Guojian Wang;H. Mei;Gang Yang;D. Mei;D. Mei;C. Zhang
中科院分区：
文献类型：
--
作者：
Wenzhao Wei;Xianghua Meng;Yangyang Li;Jing Liu;Guojian Wang;H. Mei;Gang Yang;D. Mei;D. Mei;C. Zhang
用国产晶体制造的探测器的表征是研究晶体特性的最直接方法。我们用南达科他大学 (USD) 生长的高纯度锗 (HPGe) 晶体制造了平面探测器。在制造过程中，从美元生长的晶体切下的 HPGe 晶体切片涂有高电阻率非晶 Ge (a-Ge) 薄膜，然后在 a-Ge 薄膜顶部沉积一层薄铝以定义触点的物理区域。我们研究了探测器的性能，包括一些探测器的 I-V 特性、C-V 特性和光谱测量。结果证明了美元生长的晶体和电触点的良好质量。
The characterization of detectors fabricated from home-grown crystals is the most direct way to study crystal properties. We fabricated planar detectors from high-purity germanium (HPGe) crystals grown at the University of South Dakota (USD). In the fabrication process, a HPGe crystal slice cut from a USD-grown crystal was coated with a high resistivity thin film of amorphous Ge (a-Ge) followed by depositing a thin layer of aluminum on top of the a-Ge film to define the physical area of the contacts. We investigated the detector performance including the I-V characteristics, C-V characteristics and spectroscopy measurements for a few detectors. The results document the good quality of the USD-grown crystals and electrical contacts.