Dark current in multilayer stabilized amorphous selenium based photoconductive x-ray detectors
Dark current in multilayer stabilized amorphous selenium based photoconductive x-ray detectors
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DOI：
10.1063/1.4730135
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发表时间：
2012-07-01
影响因子：
3.2
通讯作者：
Kasap, Safa O.
中科院分区：
文献类型：
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作者：
Frey, Joel B.;Belev, George;Kasap, Safa O.
我们报告的实验结果表明，在n-i-p结构，非晶硒膜的暗电流是独立的i层厚度的样品一致厚的阻挡层。然而，我们已经观察到，强烈依赖于n层厚度和正接触金属的选择。这些结果表明，暗电流的主要来源是载流子注入的接触和热产生的载流子中的光电导层的体积中的任何贡献是可以忽略的。这一结论是支持的暗电流瞬态在不同的应用领域的模型，假设只有载流子发射肖特基势垒的描述。该模型还预测，虽然空穴注入最初占主导地位，但在施加偏压后的一段时间，电子注入可能成为暗电流的主要来源。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4730135]
We report on experimental results which show that the dark current in n-i-p structured, amorphous selenium films is independent of i-layer thickness in samples with consistently thick blocking layers. We have observed, however, a strong dependence on the n-layer thickness and positive contact metal chosen. These results indicate that the dominant source of the dark current is carrier injection from the contacts and any contribution from carriers thermally generated in the bulk of the photoconductive layer is negligible. This conclusion is supported by a description of the dark current transients at different applied fields by a model which assumes only carrier emission over a Schottky barrier. This model also predicts that while hole injection is initially dominant, some time after the application of the bias, electron injection may become the dominant source of dark current. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4730135]