Improved production yield in silicon epitaxy by reducing pressure in mesoplasma chemical vapor deposition
Improved production yield in silicon epitaxy by reducing pressure in mesoplasma chemical vapor deposition
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DOI：
10.7567/apex.7.086201
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发表时间：
2014-08
影响因子：
2.3
通讯作者：
Sudong Wu;Taiki Iguchi;M. Kambara;T. Yoshida
中科院分区：
文献类型：
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作者：
Sudong Wu;Taiki Iguchi;M. Kambara;T. Yoshida
通过降低中间等离子体化学气相沉积期间的压力以在3托下获得490 nm/s的速率和60%的产率，同时保持高达210 cm 2·V-1·s-1的霍尔迁移率，提高了Si外延的外延沉积速率和生产产率。降低气压可增加沉积区附近等离子体中激发态H原子的局域密度。这种增加的密度潜在地增加了Si-Cl气体的不稳定性，并且还促进了生长前体团簇的撞击动力学，这可能是提高产量和膜质量的原因。
Epitaxial deposition rate and production yield of Si epitaxy have been improved by reducing the pressure during mesoplasma chemical vapor deposition to attain a rate of 490 nm/s and a yield of 60% at 3 Torr while maintaining a Hall mobility as high as 210 cm2·V−1·s−1. Decreasing the pressure increased the local density of excited atomic H in the plasma near the deposition region. This increased density potentially increased the instability of the Si–Cl gases and also promoted the impingement dynamics of the growth-precursor clusters, which were likely the cause of the improved production yield and film quality.