High-performance UV detector made of ultra-long ZnO bridging nanowires
High-performance UV detector made of ultra-long ZnO bridging nanowires
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DOI：
10.1088/0957-4484/20/4/045501
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发表时间：
2009-01-28
期刊：
影响因子：
3.5
通讯作者：
Delaunay, Jean-Jacques
中科院分区：
文献类型：
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作者：
Li, Yanbo;Della Valle, Florent;Delaunay, Jean-Jacques
采用化学气相沉积（CVD）工艺制备了一种由超长（约100 μ m）ZnO桥接纳米线构成的吸收型紫外光电导探测器。电极，形成梳状的厚ZnO层，和传感元件，由ZnO纳米线桥接电极，同时在一个单步CVD工艺制造。该器件在宽的紫外辐照度范围（10（-8）-10（-2）W cm（-2））下显示出电流的剧烈变化（10-10（5）倍）。此外，该检测器表现出快速响应（上升和衰减时间的数量级为1秒），在空气中的紫外照明，但没有响应可见光（hv < 3.2 eV）。我们的方法提供了一个简单和成本效益的方法来制造高性能的“可见盲”紫外探测器。
A nanowatt UV photoconductive detector made up of ultra-long (similar to 100 mu m) ZnO bridging nanowires has been fabricated by a single-step chemical vapor deposition (CVD) process. The electrodes, forming comb-shaped thick ZnO layers, and the sensing elements, consisting of ZnO nanowires bridging the electrodes, were fabricated simultaneously in a single-step CVD process. The device showed drastic changes (10-10(5) times) in current under a wide range of UV irradiances (10(-8) - 10(-2) W cm(-2)). Moreover, the detector exhibited fast response (rise and decay times of the order of 1 s) to UV illumination in air, but no response to visible light (hv < 3.2 eV). Our approach provides a simple and cost-effective way to fabricate high-performance 'visible-blind' UV detectors.