Interface-Induced High-Temperature Superconductivity in Single Unit-Cell FeSe Films on SrTiO3
Interface-Induced High-Temperature Superconductivity in Single Unit-Cell FeSe Films on SrTiO3
复制标题
SrTiO3 上单胞 FeSe 薄膜的界面诱导高温超导性
DOI：
10.1088/0256-307x/29/3/037402
复制
发表时间：
2012-03-01
影响因子：
3.5
通讯作者：
Xue Qi-Kun
中科院分区：
文献类型：
--
作者：
Wang Qing-Yan;Li Zhi;Xue Qi-Kun
报道了用分子束外延（MBE）方法在经Se刻蚀的SrTiO_3（001）衬底上生长的单晶胞（UC）厚FeSe薄膜的高温超导性。原位扫描隧道显微镜（STM）显示的超导能隙高达20 meV，磁场诱导的涡旋态表明1UC FeSe薄膜在77 K附近具有超导电性。控制输运测量表明，超导起始温度远高于50 K.我们的工作不仅为寻找新的超导体和提高TC提供了强有力的途径，而且为系统研究使用不同超导材料和衬底的非常规超导机制提供了一个明确的平台。
We report high transition temperature superconductivity in one unit-cell (UC) thick FeSe films grown on a Se-etched SrTiO3 (001) substrate by molecular beam epitaxy (MBE). A superconducting gap as large as 20 meV and the magnetic field induced vortex state revealed by in situ scanning tunneling microscopy (STM) suggest that the superconductivity of the 1 UC FeSe films could occur around 77 K. The control transport measurement shows that the onset superconductivity temperature is well above 50 K. Our work not only demonstrates a powerful way for finding new superconductors and for raising TC, but also provides a well-defined platform for systematic studies of the mechanism of unconventional superconductivity by using different superconducting materials and substrates.