Investigation of electrical properties of individual GaN nanowire‐based ferroelectric field effect transistor
Investigation of electrical properties of individual GaN nanowire‐based ferroelectric field effect transistor
复制标题
DOI：
10.1002/pssa.201431570
复制
发表时间：
2015-02
期刊：
影响因子：
--
通讯作者：
Y. Chen;X. B. Xu;Y. D. Lu;X. Wang;Y. En
中科院分区：
文献类型：
--
作者：
Y. Chen;X. B. Xu;Y. D. Lu;X. Wang;Y. En
以GaN纳米线为导电沟道，Pb（Zr0. 52Ti0. 48）O3（PZT）薄膜为栅介质，制备了铁电场效应晶体管（FeFET），并对其电学性能进行了研究。单个基于GaN纳米线的FeFET的传输特性曲线是逆时针磁滞回线，因为栅极电压从负到正然后返回。存储窗口约为5 V，在零栅压下开关电流比高达103，表明了一位铁电存储器的可行性。记忆效应的物理机制可以归因于单个GaN纳米线中的可逆载流子浓度，其由PZT薄膜的可切换剩余极化调制。研究结果为GaN纳米线在非易失性存储器中的应用提供了理论依据。
Ferroelectric field effect transistors (FeFETs) using individual GaN nanowire as the conducting channel and Pb(Zr0.52Ti0.48)O3 (PZT) thin film as the gate dielectric were fabricated, and their electrical properties were investigated. The curves of the transfer characteristics for the individual GaN nanowire‐based FeFET are of counterclockwise hysteresis loops, as the gate voltage was swept from negative to positive and then back. The memory window is about 5 V, and an on/off current ratio is up to 103 at zero gate voltage, indicating the feasibility of one‐bit ferroelectric memory. The physical mechanism for the memory effect could be attributed to the reversible carrier concentration in individual GaN nanowire, which is modulated by the switchable remnant polarization of PZT thin film. The results may be helpful for the potential application of GaN nanowire in nonvolatile memory.