Defect generation and annihilation in GaN grown on patterned silicon substrate
Defect generation and annihilation in GaN grown on patterned silicon substrate
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图案化硅衬底上生长的 GaN 中的缺陷产生和消灭
DOI：
10.1117/12.2002738
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
and H.Amano
中科院分区：
文献类型：
--
作者：
N.Sawaki;S.Ito;T.Nakagita;H.Iwata;T.Tanikawa;M.Irie;Y.Honda;M.Yamaguchi;and H.Amano
研究了通过选择性金属有机气相外延与 AlN 缓冲层在图案化 (001)Si 衬底上生长的 (1-101) GaN 中的穿透位错和堆垛层错行为。横截面透射电子显微镜图像显示，错配位错在 GaN/AlN/Si 异质界面处产生了穿透位错，而当具有不同晶轴的两个晶体合并时会产生堆垛层错。我们发现其中一些被湮灭形成一个循环，在很短的距离内产生了两个堆垛层错。这表明有一种方法可以降低 III 族氮化物中堆垛层错的密度。
The behavior of threading dislocations and stacking faults were investigated in a (1-101) GaN grown on a patterned (001)Si substrate by selective metal-organic-vapor-phase-epitaxy with an AlN buffer layer. Cross sectional transmission electron microscopy images showed that threading dislocations are generated at the hetero-interface of GaN/AlN/Si induced by misfit dislocations, while stacking faults are generated when two crystals with different crystal axes coalesce. We found some of them are annihilated making a loop, where two stacking faults have been generated at a short distance. This suggests a rout to decrease the density of stacking faults in III nitrides.