Atomic depth distribution and growth modes of In and Ga on Si(111) surfaces studied by reflection high-energy electron diffraction (RHEED) and total-reflection-angle x-ray spectroscopy(TRAXS)",
Atomic depth distribution and growth modes of In and Ga on Si(111) surfaces studied by reflection high-energy electron diffraction (RHEED) and total-reflection-angle x-ray spectroscopy(TRAXS)",
复制标题
利用反射高能电子衍射(RHEED)和全反射角X射线能谱(TRAXS)研究In和Ga在Si(111)表面的原子深度分布和生长模式"
DOI：
--
复制
发表时间：
2005
期刊：
影响因子：
--
通讯作者：
山中俊朗
中科院分区：
文献类型：
--
作者：
Ling Jiang;Qiang Xu;山中俊朗
