Achieving the Intrinsic Limit of Quality Factor in VHF Extensional-Mode Block Resonators
Achieving the Intrinsic Limit of Quality Factor in VHF Extensional-Mode Block Resonators
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DOI：
10.1109/fcs.2018.8597472
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发表时间：
2018-05
期刊：
影响因子：
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通讯作者：
Hakhamanesh Mansoorzare;Sina Moradian;S. Shahraini;R. Abdolvand;J. Gonzales
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文献类型：
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作者：
Hakhamanesh Mansoorzare;Sina Moradian;S. Shahraini;R. Abdolvand;J. Gonzales
在这项工作中，我们证明，它是可能的，以推动最主要的外在损失（即锚和空气损失）在高频薄膜压电基板（TPoS）MEMS谐振器的水平，他们不再限制整体$Q$。这是通过改变谐振器周围的衬底区域、蚀刻凹口和反射器结构来实现的，使得一旦谐振器在真空中操作，所得到的声腔实际上不会泄漏声能。我们实验证明我们的技术，提出了一个1100%的改善$Q$的TPoS谐振器工作在~82 MHz，并实现了$f\times Q$为2.6\times 10^{12}$。
In this work we demonstrate that it is possible to push the most dominant sources of extrinsic loss (i.e. anchor and air loss) in high-frequency thin-film piezoelectric-on-substrate (TPoS) MEMS resonator to levels that they no longer limit the overall $Q$. This is achieved through altering the substrate regions around the resonators, etching notch and reflector structures, so that the resulted acoustic cavity is virtually not leaking acoustic energy once the resonator is operated in vacuum. We experimentally prove our technique by presenting an 1100% improvement in $Q$ for a TPoS resonator operating at ~82 MHz and achieving an $f\times Q$ of $2.6\times 10^{12}$.