Diamond Schottky Barrier Diodes With NO2 Exposed Surface and RF-DC Conversion Toward High Power Rectenna
Diamond Schottky Barrier Diodes With NO2 Exposed Surface and RF-DC Conversion Toward High Power Rectenna
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DOI：
10.1109/led.2016.2626380
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发表时间：
2017
影响因子：
4.9
通讯作者：
T. Oishi;Naoto Kawano;Satoshi Masuya;M. Kasu
中科院分区：
文献类型：
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作者：
T. Oishi;Naoto Kawano;Satoshi Masuya;M. Kasu
为了研制大功率整流天线，研制了一种新型的金刚石肖特基势垒二极管（SBD）。引入双重NO2暴露以在金刚石表面提供高浓度的2-D空穴气体。实验结果表明，我们的SBD具有良好的整流性能，在正向电压为-2 V时，电流密度为24 A/cm ~ 2。采用两个金刚石SBD设计了一个双二极管整流电路，二极管模型由实验I-V曲线构建。电路元件的值，如直流阻塞电容和负载电阻的选择，以实现更大的输出电压。在实验上实现了射频到直流的转换，将10 MHz、9 V的射频输入电压转换为4.2 V的直流输出电压。
A novel diamond Schottky barrier diode (SBD) with H-terminated surface exposed to NO2 gas is fabricated toward high power rectifying antenna (rectenna). The double NO2 exposures are introduced to provide high concentration of 2-D hole gas at the diamond surface. Experimentally, our SBDs have shown to give good rectifier properties with the high current density of 24 A/cm2 at a forward voltage of -2 V. A dual diode rectifier circuit using two diamond SBDs was designed with diode model constructed from experimental I-V curves. Values of circuit components such as dc block capacitance and load resistance were selected to achieve larger output voltage. Experimentally RF to dc conversion is demonstrated, where RF input voltage with 10 MHz and the amplitude of 9 V was converted into a dc output voltage as large as 4.2 V.