Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients
Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients
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DOI：
10.1109/tns.2018.2880287
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发表时间：
2018-12-01
影响因子：
1.8
通讯作者：
Kuball, Martin
中科院分区：
文献类型：
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作者：
Butler, Peter A.;Uren, Michael J.;Kuball, Martin
采用瞬态电流谱法测量了中子辐照对AlGaN/GaN高电子迁移率晶体管输出限流电荷陷阱的影响，时间常数为10 ms ~ 1800 s。我们发现，离散的陷阱之间的耦合是明显的，与通常采用的假设独立的陷阱（放电），并增加后，14 MeV的中子照射2 × 10（13）n/cm（2）及以上。高达7.8 x 10（14）N/cm（2）的高剂量辐照，相当于暴露在恶劣的辐射环境中8年，例如国际热核实验反应堆中性束注入器原型，增加了捕获的电荷密度，并将瞬态漏电流降低到其平衡值的75%。这些变化与基于辐射输运计算的位移损伤估计一致。
Current transient spectroscopy was used to measure the impact of neutron irradiation on output current-limiting charge traps in AlGaN/GaN high electron mobility transistors with time constants from 10 ms to 1800 s. We find that coupling between discrete traps was apparent, in contrast to the commonly employed assumption of independent trap (dis)charging, and increased after 14-MeV neutron irradiation of 2 x 10(13) n/cm(2) and above. Irradiation to a high dose of as much as 7.8 x 10(14) n/cm(2), which is comparable to eight years exposure to a harsh radiation environment, such as the International Thermonuclear Experimental Reactor neutral-beam injector prototype, increased trapped charge density and reduced transient drain current to as little as 75% of its equilibrium value. These changes are consistent with displacement damage estimates based on the radiation transport calculations.