NANOSCALE OXIDATION OF GAAS-BASED SEMICONDUCTORS USING ATOMIC FORCE MICROSCOPE
NANOSCALE OXIDATION OF GAAS-BASED SEMICONDUCTORS USING ATOMIC FORCE MICROSCOPE
复制标题
使用原子力显微镜对基于 GAAS 的半导体进行纳米级氧化
DOI：
10.1063/1.366907
复制
发表时间：
1998
影响因子：
3.2
通讯作者：
J. Harris
中科院分区：
文献类型：
--
作者：
Y. Okada;S. Amano;M. Kawabe;B. N. Shimbo;J. Harris
Fundamental results obtained in an atomic force microscope (AFM) direct nanoscale oxidation process are presented, which is regarded as a simple method for fabricating nm-scale devices such as single electron tunneling transistors and quantum effect electronic devices. Using Au-coated Si cantilevers, we have succeeded in drawing nm-scale oxide lines in GaAs-based semiconductor surfaces; n+-GaAs(100) and self-assembled InGaAs quantum dots grown by molecular beam epitaxy on GaAs(100) substrates. The effects of AFM drawing parameters such as tip bias voltage and writing speed on oxide linewidth and height have been explored. GaAs oxide lines as narrow as ∼40 nm have been patterned by this technique.
影响因子：
4
作者：
LEONARD, D;KRISHNAMURTHY, M;PETROFF, PM
通讯作者：
PETROFF, PM